Datasheet4U Logo Datasheet4U.com

SSM6J505NU - Silicon P-Channel MOSFET

Features

  • (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J505NU 1.2.5.6 Drain 3. Gate 4. Source ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-05 2021-09-17 Rev.5.0 SSM6J505NU 4. Absolute Maximum Rat.

📥 Download Datasheet

Datasheet preview – SSM6J505NU

Datasheet Details

Part number SSM6J505NU
Manufacturer Toshiba Semiconductor
File Size 272.23 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6J505NU Datasheet
Additional preview pages of the SSM6J505NU datasheet.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J505NU 1.2.5.6 Drain 3. Gate 4. Source ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-05 2021-09-17 Rev.5.0 SSM6J505NU 4.
Published: |