Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS- )
1. Applications
- Power Management Switches
2. Features
(1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
UDFN6B
1.2.5.6 Drain 3. Gate 4. Source
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Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2012-05
2021-09-17 Rev.5.0
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