Datasheet Summary
MOSFETs Silicon P-Channel MOS
1. Applications
- Analog Switches
2. Features
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ.) (@VGS = -4.5 V)
3. Packaging and Internal Circuit
ES6
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
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Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2017-03
2021-02-01 Rev.3.0
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