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SSM6P35FU - P-Channel MOSFET

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SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2) Characteristics Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse VDSS VGSS ID IDP -20 V ±10 V -100 mA -200 1.SOURCE 1 2.GATE 1 3.DRAIN 2 4.SOURCE 2 5.GATE 2 6.
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