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SSM6P39TU - MOSFET

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SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 0.65 0.65 2.0±0.1 Unit: mm 2.1±0.1 1.7±0.1 • • • 1.8 V drive P-ch 2-in-1 Low ON-resistance: 2 3 5 4 Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common) (Note) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -1.5 -3 500 150 −55 to 150 Unit V V A mW °C °C 0.7±0.05 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 UF6 JEDEC JEITA TOSHIBA ― ― 2-2T1B Weight: 7.0mg (typ.) Note: Using continuously under heavy loads (e.g.
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