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SSM6P36TU - MOSFET

Features

  • RITTEN SIGNED.

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SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU ○ Power Management Switches • • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) 0.65 0.65 2.0±0.1 1.3±0.1 1 2 3 Unit: mm 2.1±0.1 1.7±0.1 Absolute Maximum Ratings (Ta = 25 °C) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±8 -330 -660 500 150 −55 to 150 Unit V 5 4 mA mW °C °C 0.7±0.05 V 1.Source1 4.Source2 5.Gate2 6.Drain1 Note: Using continuously under heavy loads (e.g.
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