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SSM6P05FU www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P05FU
Power Management Switch High Speed Switching Applications
Unit: mm
• • •
Small package Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V) : Ron = 4.0 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±12 −200 −400 300 150 −55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-2J1C
Note:
Using continuously under heavy loads (e.g. the application of Weight: 6.8 mg (typ.
SSM6P05FU Datasheet
