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SSM6P09FU - P-Channel MOSFET

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SSM6P09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P09FU High Speed Switching Applications Unit: mm • Small package • Low Drain-Source ON resistance. : Ron = 2.7 Ω (max) (@VGS = −10 V) : Ron = 4.2 Ω (max) (@VGS = −4 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID −200 mA IDP −800 Drain power dissipation (Ta = 25°C) PD (Note 1) 300 mW Channel temperature Storage temperature range Tch 150 °C JEDEC ― Tstg −55~150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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