Datasheet4U Logo Datasheet4U.com

SSM6P15FE - P-Channel MOSFET

📥 Download Datasheet

📁 Similar Datasheet

  • SSM6P35AFE - Silicon P-Channel MOSFET (Toshiba)
  • SSM6P35AFU - Silicon P-Channel MOSFET (Toshiba)
  • SSM6P56FE - P-Channel MOSFET (Toshiba)
  • SSM6P69NU - P-Channel MOSFET (Toshiba)
  • SSM6P816R - P-Channel MOSFET (Toshiba)
  • SSM60T03GH - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GJ - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GP - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03GS - N-channel Enhancement-mode Power MOSFET (Silicon Standard)
  • SSM60T03H - N-Channel Enhancement Mode Power MOSFET (Silicon Standard)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FE High Speed Switching Applications Analog Switch Applications SSM6P15FE • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID −100 mA IDP −200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
Published: |