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TA4032FT - Bipolar wide-band amplifier

Features

  • Low Noise Figure: NF = 1dB (typ. ) (@ f=1.575GHz).
  • High Gain:|S21e|2 = 14.8dB (typ. ) (@ f=1.575GHz).
  • ESD immunity level improvement of TA4020FT. Marking 4 3 U6 1 2 No. Pin Name 1 INPUT 2 GND 3 OUTPUT 4 VCC TESQ Weight: 1.5mg (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Voltage at pin Vcc Output Voltage Current into pin Vcc Total Power dissipation Junction temperature Operate temperature Range Storage temperature.

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Datasheet Details

Part number TA4032FT
Manufacturer Toshiba
File Size 266.79 KB
Description Bipolar wide-band amplifier
Datasheet download datasheet TA4032FT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4032FT TA4032FT ○ UHF Band Low Noise Amplifier Applications Thin Extreme Super mini Quad Package (4pin) : TESQ FEATURES • Low Noise Figure: NF = 1dB (typ.) (@ f=1.575GHz) • High Gain:|S21e|2 = 14.8dB (typ.) (@ f=1.575GHz) • ESD immunity level improvement of TA4020FT. Marking 4 3 U6 1 2 No. Pin Name 1 INPUT 2 GND 3 OUTPUT 4 VCC TESQ Weight: 1.5mg (typ.
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