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Toshiba Electronic Components Datasheet

TA4032FT Datasheet

Bipolar wide-band amplifier

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TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic
TA4032FT
TA4032FT
UHF Band Low Noise Amplifier Applications
Thin Extreme Super mini Quad Package (4pin) : TESQ
FEATURES
Low Noise Figure: NF = 1dB (typ.) (@ f=1.575GHz)
High Gain:|S21e|2 = 14.8dB (typ.) (@ f=1.575GHz)
ESD immunity level improvement of TA4020FT.
Marking
4
3
U6
1
2
No.
Pin Name
1
INPUT
2
GND
3
OUTPUT
4
VCC
TESQ
Weight: 1.5mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Voltage at pin Vcc
Output Voltage
Current into pin Vcc
Total Power dissipation
Junction temperature
Operate temperature Range
Storage temperature Range
VCC
5
V
VOUT
3
V
ICC
15
mA
PD
100
mW
Tj
150
°C
Topr
40 to 85
°C
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operation range
Characteristics
Voltage supply
Symbol
VCC
Test Condition
Min Typ. Max Unit
2.5
3
5
V
Start of commercial production
2008-12
1
2014-03-01


Toshiba Electronic Components Datasheet

TA4032FT Datasheet

Bipolar wide-band amplifier

No Preview Available !

TA4032FT
Electrical Characteristics (Ta = 25°C)
Characteristics
Circuit Current
Insertion Gain
Noise Figure
3rd order intermodulation distortion
input intercept point
3rd order intermodulation distortion
output intercept point
Input return loss
Output return loss
Isolation
Symbol
Test Condition
ICC
|S21e|2(1)
|S21e|2(2)
|S21e|2(3)
NF(1)
NF(2)
NF(3)
IIP3
OIP3
RLin
RLout
ISL
VCC = 3V
VCC = 3V, f = 1.575GHz
ZS=ZL=50
VCC = 3V, f = 2GHz
ZS=ZL=50
VCC = 3V, f = 2.4GHz
ZS=ZL=50
VCC = 3V, f = 1.575GHz
ZS=ZL=50
VCC = 3V, f = 2GHz
ZS=ZL=50
VCC = 3V, f=2.4GHz
ZS=ZL=50
VCC = 3V, f = 1.575GHz , f = 1MHz
ZS=ZL=50
VCC = 3V, f = 1.575GHz , f = 1MHz
ZS=ZL=50
VCC = 3V, f = 1.575GHz
ZS=ZL=50
VCC = 3V, f = 1.575GHz
ZS=ZL=50
VCC = 3V, f = 1.575GHz
ZS=ZL=50
Min Typ. Max Unit
3.8
5
6.5 mA
13 14.8
dB
11
13
dB
10 11.7
dB
1
1.2
dB
1.05 1.25 dB
1.15 1.4
dB
-11 -8.2 dBmW
2
5.9
dBmW
5.6
dB
7.8
dB
24.3
dB
Caution:
This device is sensitive to electrostatic discharge due to the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
4
3
1
2
Equivalent Circuit
2
2014-03-01


Part Number TA4032FT
Description Bipolar wide-band amplifier
Maker Toshiba
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TA4032FT Datasheet PDF






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