TC511632FTL-10 Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

Download the TC511632FTL-10 datasheet PDF. This datasheet also includes the TC511632FL-70 variant, as both parts are published together in a single manufacturer document.

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TC511632FTL-10 silicon gate cmos pseudo static ram by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TC511632FL-70-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TC511632FTL-10
Manufacturer	Toshiba
File Size	412.78 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC511632FTL-10 Datasheet

General Description

The TC511632FUFTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits.

The TC511632FUFTL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

The TC511632FUFTL operates from a single 5V power supply.

Overview

TOSHIBA SILICON GATE CMOS 1l:511632~/F1lL-70/85/10 PRELIMINARY 32,768 WORD x 16 BIT CMOS PSEUDO STATIC.

Key Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of WE thus simplifying the microprocessor interface. The TC511632FUFTL is available in a 40-pin small outline plastic flat package and a 44-pin outline (40 actual pins) plastic thin small outline package (forward type). Features Pin Connection (Top View).
Organization: 32,768 words.

More Datasheets from Toshiba

Part Number	Description
TC511632FTL-70	SILICON GATE CMOS PSEUDO STATIC RAM
TC511632FTL-85	SILICON GATE CMOS PSEUDO STATIC RAM
TC511632FL-10	SILICON GATE CMOS PSEUDO STATIC RAM
TC511632FL-70	SILICON GATE CMOS PSEUDO STATIC RAM
TC511632FL-85	SILICON GATE CMOS PSEUDO STATIC RAM
TC5116400BSJ	4194304 word x 4 Bit Dynamic Ram
TC5116400BSJ-60	DRAM
TC5116400BSJ-70	DRAM
TC5116400BST-60	DRAM
TC5116400BST-70	DRAM