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TC514258Z-10 - DRAM

This page provides the datasheet information for the TC514258Z-10, a member of the TC514258P-85 DRAM family.

Description

The TCS142SBP/J/Z is the new generation dynamic RAM organized 262,144 words by 4 bit.

Features

  • include single power supply of SV±lO% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 262,144 WORDS X 4 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC514258P/J/Z-85, TC514258P/J/Z-l0 TC514258P/J/Z-12 The TCS142SBP/J/Z is the new generation dynamic RAM organized 262,144 words by 4 bit. The TCS142SBP/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. MUltiplexed address inputs permit the TCS142SBP/J/Z to be packaged in a standard 20 pin plastic DIP and 20/26 pin plastic SOJ and 20/19 pin plastic ZIP. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
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