Datasheet4U Logo Datasheet4U.com

TC51864PL-10 - SILICON GATE CMOS PSEUDO STATIC RAM

This page provides the datasheet information for the TC51864PL-10, a member of the TC51864PL-85 SILICON GATE CMOS PSEUDO STATIC RAM family.

Description

The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits.

The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC51864PL is available in a 32-pin, 0.6 inch width plastic DIP, and a small outline plastic flat package. Features.
  • Organization: 65,536 words x 8 bits.
  • Single 5V power supply.
  • Fast access time TC51864 Family -85 -10 tCEA CE Access Time tOEA OE.

📥 Download Datasheet

Datasheet preview – TC51864PL-10

📁 Similar Datasheet

Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
TOSHIBA SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM 1l:51864PL/FL~5/10 PRELIMINARY Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51864PL operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC51864PL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC51864PL is available in a 32-pin, 0.
Published: |