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TC55257CFL-85L - SILICON GATE CMOS STATIC RAM

Download the TC55257CFL-85L datasheet PDF. This datasheet also covers the TC55257CPL-70L variant, as both devices belong to the same silicon gate cmos static ram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (TC55257CPL-70L-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply.

Advanced circuit techniques provide both high speed and low power

Overview

TOSHIBA TC55257CPL/CFL/CSPL/CFIL/CTRL-70L/85L/10L SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC.

Key Features

  • with an operating current of 5mNMHz (typ. ) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 21lA at room temperature. The TC55257CPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257CPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are r.

More Datasheets from Toshiba

Part Number Description
TC55257CFL-85 SILICON GATE CMOS STATIC RAM
TC55257CFL-10 SILICON GATE CMOS STATIC RAM
TC55257CFL-10L SILICON GATE CMOS STATIC RAM
TC55257CFL-70 SILICON GATE CMOS STATIC RAM
TC55257CFL-70L SILICON GATE CMOS STATIC RAM
TC55257CFI-10 SILICON GATE CMOS STATIC RAM
TC55257CFI-10L SILICON GATE CMOS STATIC RAM
TC55257CFI-85 SILICON GATE CMOS STATIC RAM
TC55257CFI-85L SILICON GATE CMOS STATIC RAM
TC55257CFTI-10 SILICON GATE CMOS STATIC RAM