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TC554161TRL-10 - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC554161TRL-10, a member of the TC554161FTL-70 SILICON GATE CMOS STATIC RAM family.

Datasheet Summary

Description

The TC554161 FTUTRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply.

Features

  • with an operating current of 1OmNMHz (typ. ) and a minimum cycle time of lOns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 1O~ (max. ). The TC554161 FTUTRL has two control inputs. A chip enable input (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. Byte access is supported by upper and lower byte controls. The TC554161 FTUTRL is suitable for use in microprocess.

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Datasheet Details

Part number TC554161TRL-10
Manufacturer Toshiba
File Size 253.49 KB
Description SILICON GATE CMOS STATIC RAM
Datasheet download datasheet TC554161TRL-10 Datasheet
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TOSHIBA 1l:554161F1nL/~-70/85/10 SILICON GATE CMOS PRELIMINARY 262,144 WORD x 16 BIT STATIC RAM Description The TC554161 FTUTRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 1OmNMHz (typ.) and a minimum cycle time of lOns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 1O~ (max.). The TC554161 FTUTRL has two control inputs. A chip enable input (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. Byte access is supported by upper and lower byte controls.
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