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TC55B8128J-15 - 128K x 4-Bit BiCMOS Static RAM

Download the TC55B8128J-15 datasheet PDF. This datasheet also covers the TC55B8128P variant, as both devices belong to the same 128k x 4-bit bicmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TC55B8128P/J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable.!:!!9h speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC55B8128P/J is suitable for use in high speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55B8128P_Toshiba.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA 1l:55B8128P/]-12/15/20 SILICON GATE BiCMOS 131,072 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B8128P/J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable.!:!!9h speed operation. The TC55B8128P/J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC55B8128P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B8128P/J is available in a 400mil width, 32-pin DIP and SOJ suitable for high density surface assembly.
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