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TC58FVB641 - 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY

Download the TC58FVB641 datasheet PDF. This datasheet also covers the TC58FVT641-10 variant, as both devices belong to the same 64-mbit (8m x 8 bits / 4m x 16 bits) cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits.

Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC58FVT641-10_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC58FVB641
Manufacturer Toshiba
File Size 603.53 KB
Description 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY
Datasheet download datasheet TC58FVB641 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TC58FVB004 4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVB160 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
TC58FVB321 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
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TC58FVM6B2AFT65 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES • Power supply voltage • Block erase architecture VDD = 2.7 V~3.
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