64-MBIT Datasheet | Pinout, Features, Price Comparison & PDF

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

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MOSEL VITELIC V54C3256164VBUC/T LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 PRELIMINARY 6 System Frequency (fCK) Clock

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SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus Features • Organized as 4M x16 • Single Volta

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S29GL064S 64 Mbit (8 Mbyte) 3.0 V Flash Memory Distinctive Characteristics  CMOS 3.0 Volt Core with Versatile I/O Architectural Advantages  Single

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MOSEL VITELIC V54C3256164VBUC/T LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 PRELIMINARY 6 System Frequency (fCK) Clock

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MOSEL VITELIC V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 System

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MOSEL VITELIC V58C365164S 64 Mbit DDR SDRAM 4M X 16, 3.3VOLT PRELIMINARY 36 System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5

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w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) C

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w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) C

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IC42S32200 IC42S32200L Document Title 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM Revision History www.datasheet4u.com Revision No History Initial Draf

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S25FL512S 512 Mbit (64 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O Da

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CY7C1262XV18 CY7C1264XV18 36-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR® II+ Xtreme SRAM Two-Word Bur

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FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional

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S25FL064L 64-Mbit (8-Mbyte) 3.0 V FL-L SPI Flash Memory General Description The Cypress FL-L Family devices are Flash Non-volatile Memory products us

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K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to

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IS42R32200C1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals

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M29W064FT M29W064FB 64-Mbit (8 Mbit x8 or 4 Mbit x16, page, boot block) 3 V supply flash memory Preliminary Data Features „ Supply voltage – VCC = 2.

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Not recommended for new designs. Please use SST38VF6401B/6402B/6403B/64040B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402

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Not recommended for new designs. Please use SST38VF6401B/6402B/6403B/64040B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402

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D a t a S h e e t , Rev. 1.2, A p r . 2 00 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double Data Rate SDRAM Memory Products Ne

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