K4S641632E 64Mbit SDRAM

Samsung semiconductor

Description

K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept.2001 * Samsung Electronics reserves the righ.
The K4S641632E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high p.

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Datasheet Specifications

Part number: K4S641632E
Manufacturer: Samsung semiconductor
File Size: 129.24 KB
Datasheet: K4S641632E_Samsungsemiconductor.pdf
Description: 64Mbit SDRAM

Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

Applications

* ORDERING INFORMATION Part No. K4S641632E-TC50/TL50 K4S641632E-TC55/TL55 K4S641632E-TC60/TL60 K4S641632E-TC70/TL70 K4S641632E-TC75/TL75 Max Freq. 200MHz(CL=3) 183MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) 100MHz(CL=3) LVTTL 54 TSOP(II) Interf

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📁 Related Datasheet

K4S641632H K4S641632N K4S640832N K4S643232H-TC-L50 K4S643232H-TC-L55 K4S643232H-TC-L60

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K4S641632E 64Mbit SDRAM Samsung semiconductor

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