Datasheet4U Logo Datasheet4U.com
15 views

K4S641632E Datasheet - Samsung semiconductor

K4S641632E 64Mbit SDRAM

The K4S641632E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock .

K4S641632E Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

K4S641632E Datasheet (129.24 KB)

Preview of K4S641632E PDF
K4S641632E Datasheet Preview Page 2 K4S641632E Datasheet Preview Page 3

Datasheet Details

Part number:

K4S641632E

Manufacturer:

Samsung semiconductor

File Size:

129.24 KB

Description:

64mbit sdram.

📁 Related Datasheet

K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM (Samsung semiconductor)

K4S641632D 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S641632F 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)

K4S641632H 64Mb H-die SDRAM (Samsung Electronics)

K4S641632H-L60 64Mb H-die SDRAM Specification (Samsung semiconductor)

K4S641632H-L70 64Mb H-die SDRAM Specification (Samsung semiconductor)

K4S641632H-L75 64Mb H-die SDRAM Specification (Samsung semiconductor)

K4S641632H-TC60 64Mb H-die SDRAM Specification (Samsung semiconductor)

TAGS

K4S641632E 64Mbit SDRAM Samsung semiconductor

K4S641632E Distributor