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K4S641632E

64Mbit SDRAM

K4S641632E Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

K4S641632E General Description

The K4S641632E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock .

K4S641632E Datasheet (129.24 KB)

Preview of K4S641632E PDF

Datasheet Details

Part number:

K4S641632E

Manufacturer:

Samsung semiconductor

File Size:

129.24 KB

Description:

64mbit sdram.
K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001
* Samsung Electronics reserves the righ.

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K4S641632E 64Mbit SDRAM Samsung semiconductor

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