K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM

Samsung semiconductor

Description

K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM .
The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high p.

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Datasheet Specifications

Part number: K4S641632C
Manufacturer: Samsung semiconductor
File Size: 1.14 MB
Datasheet: K4S641632C_Samsungsemiconductor.pdf
Description: 1M x 16Bit x 4 Banks Synchronous DRAM

Features

* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a

Applications

* ORDERING INFORMATION Part No. K4S641632C-TC/L60 K4S641632C-TC/L70 K4S641632C-TC/L75 K4S641632C-TC/L80 K4S641632C-TC/L1H K4S641632C-TC/L1L K4S641632C-TC/L10 Max Freq. 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) 125MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) 66M

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K4S641632H K4S641632N K4S640832N K4S643232H-TC-L50 K4S643232H-TC-L55 K4S643232H-TC-L60

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K4S641632C 16Bit Banks Synchronous DRAM Samsung semiconductor

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