K4S641632D - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

K4S641632D Datasheet Preview — Preview of K4S641632D PDF

Datasheet Details

Part number	K4S641632D
Manufacturer	Samsung semiconductor
File Size	115.07 KB
Description	64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S641632D_Samsungsemiconductor.pdf

K4S641632D Product details

Description

The K4S641632D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

📁 K4S641632D Similar Datasheet

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Other Datasheets by Samsung semiconductor

K4S641632C - 1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632E - 64Mbit SDRAM
K4S641632F - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632H-L60 - 64Mb H-die SDRAM Specification
K4S641632H-L70 - 64Mb H-die SDRAM Specification
K4S641632H-L75 - 64Mb H-die SDRAM Specification

Published: Apr 7, 2005 |