* JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled a
K4S641632D Datasheet (115.07 KB)
K4S641632D
Samsung semiconductor
115.07 KB
64mbit sdram 1m x 16bit x 4 banks synchronous dram lvttl.
K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 Samsung Electronics reserves the right.
📁 Related Datasheet
K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM (Samsung semiconductor)
K4S641632E 64Mbit SDRAM (Samsung semiconductor)
K4S641632F 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S641632H 64Mb H-die SDRAM (Samsung Electronics)
K4S641632H-L60 64Mb H-die SDRAM Specification (Samsung semiconductor)
K4S641632H-L70 64Mb H-die SDRAM Specification (Samsung semiconductor)
K4S641632H-L75 64Mb H-die SDRAM Specification (Samsung semiconductor)
K4S641632H-TC60 64Mb H-die SDRAM Specification (Samsung semiconductor)
K4S641632H-TC70 64Mb H-die SDRAM Specification (Samsung semiconductor)
K4S641632H-TC75 64Mb H-die SDRAM Specification (Samsung semiconductor)
