3PEAK
TPC5160 - 16bit SAR ADC
TPC5160
16bit SAR ADC with full differential input
Features
16bit SAR ADC without zero latency − Throughput speed: 600 KSPS
Unipolar, differentia
(19 views)
Hynix Semiconductor
HY27UF081G2A - 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1Gb NAND FLASH
HY27UF081G2A HY27UF161G2A
This document is a general product descri
(15 views)
Samsung semiconductor
K4S281632C-TP - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 2001
* Samsung Electronics reserves the ri
(13 views)
TMT
T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
tm
• • • • •
TE CH
T431616C
SDRAM
FEATURES
3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed add
(13 views)
Hynix Semiconductor
HY62UF16101CSLF - 64Kx16bit full CMOS SRAM
HY62UF16101C Series
64Kx16bit full CMOS SRAM
Document Title
64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM
Revision History
Revision No 03 His
(12 views)
ISSI
IS45VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
(12 views)
Samsung semiconductor
K4S281632M-L1L - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
Samsung Electronics reserves the right to c
(12 views)
Hynix Semiconductor
HY27US08281A - (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US(08/16)281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Document Title
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory Revision History
Rev
(12 views)
Hynix Semiconductor
HY27US08561A - (HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Document Title
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
(12 views)
DP
DP5020 - CMOS 16BIT LED DRIVER
Machine Translated by Google Features
DP5020
CMOS 16BIT LED DRIVER CIRCUIT
DP5020 is a driver IC designed for LED display panels. It has a built-in
(12 views)
Samsung semiconductor
KM416V1200B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
CMOS DRAM
This is a family of 1,048,57
(11 views)
Samsung semiconductor
K4S281632D-L75 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Rev. 0.1 Sept. 2001
* Samsung Electronics reserves the right to ch
(11 views)
Hyundai
HY5DU281622 - 4 Banks x 2M x 16Bit Double Data Rate SDRAM
HY5DU281622
4 Banks x 2M x 16Bit Double Data Rate SDRAM
PRELIMINARY
DESCRIPTION
The Hyundai HY5DU281622 is a 134,217,728-bit CMOS Double Data Rate(DD
(11 views)
Samsung semiconductor
KM416V256D - 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C256D, KM416V256D
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
CMOS DRAM
This is a family of 262,144 x 16 bit Fast Page Mode C
(10 views)
Samsung semiconductor
K4S281632M-TC - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.0 Aug. 1999
Samsung Electronics reserves the right to c
(10 views)
Samsung semiconductor
K4S561632D - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
www.DataSheet4U.com
K4S561632D
CMOS SDRAM
256Mbit SDRAM
4M x 16bit x 4 Banks Synchronous DRAM LVTTL
DataSheet4U.com
DataShee
Revision 0.1 Aug. 2
(10 views)
Samsung semiconductor
K4S561633F-E - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed addr
(10 views)
Samsung semiconductor
K4S56163PF-RG - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba
(10 views)
Samsung semiconductor
K4S641633H-F75 - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add
(10 views)
Integrated Silicon Solution
IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
FEBRUARY 2008
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully
(10 views)