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HY57V641620HG - 4 Banks x 1M x 16Bit Synchronous DRAM

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Hynix Semiconductor

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HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY57V641620HG

Datasheet Details

Part number	HY57V641620HG
Manufacturer	Hynix Semiconductor
File Size	86.74 KB
Description	4 Banks x 1M x 16Bit Synchronous DRAM
Datasheet	HY57V641620HG Datasheet
Additional preview pages of the HY57V641620HG datasheet.

Product details

Description

and is subject to change without notice.

Features

Single 3.3± 0 . 3 V power supply Note).
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch.
All inputs and outputs referenced to positive edge of system clock - 1, 2, 4 or 8 for Interleave Burst.
Programmable.

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Published: Apr 2, 2005 |