HY57V641620HG Datasheet, dram equivalent, Hynix Semiconductor

HY57V641620HG Features

• Dram
• Single 3.3± 0 . 3 V power supply Note)
• Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Lengt

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Part number:

HY57V641620HG

Manufacturer:

Hynix Semiconductor

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86.74kb

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📄 Datasheet

Description:

4 banks x 1m x 16bit synchronous dram. and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No pat

HY57V641620HG Application

• Applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering

TAGS

HY57V641620HG

Hynix Semiconductor

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