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HY57V641620HG

4 Banks x 1M x 16Bit Synchronous DRAM

HY57V641620HG Features

* Single 3.3± 0 . 3 V power supply Note)

* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interfac

HY57V641620HG General Description

and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5/Jun.01 HY57V641620HG P IN C O N F IG U R A T IO N VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM /WE /CAS /RAS /C.

HY57V641620HG Datasheet (86.74 KB)

Preview of HY57V641620HG PDF

Datasheet Details

Part number:

HY57V641620HG

Manufacturer:

Hynix Semiconductor

File Size:

86.74 KB

Description:

4 banks x 1m x 16bit synchronous dram.
HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui.

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TAGS

HY57V641620HG Banks 16Bit Synchronous DRAM Hynix Semiconductor

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