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HY57V641620HG Datasheet - Hynix Semiconductor

HY57V641620HG, 4 Banks x 1M x 16Bit Synchronous DRAM

HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui.
and is subject to change without notice.
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HY57V641620HG_HynixSemiconductor.pdf

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Datasheet Details

Part number:

HY57V641620HG

Manufacturer:

Hynix Semiconductor

File Size:

86.74 KB

Description:

4 Banks x 1M x 16Bit Synchronous DRAM

Features

* Single 3.3± 0 . 3 V power supply Note)
* Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interfac

Applications

* which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data pat

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