HY57V64420HG Datasheet - Hynix Semiconductor

HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM

The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4. HY57V644020HG is offering fully synchronous operation referenced to a positive .

HY57V64420HG Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation

HY57V64420HG_HynixSemiconductor.pdf