HY57V641620HG-I - 4 Banks x 1M x 16Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY57V641620HG-I
Manufacturer	Hynix Semiconductor
File Size	145.13 KB
Description	4 Banks x 1M x 16Bit Synchronous DRAM
Datasheet	HY57V641620HG-I Datasheet
Additional preview pages of the HY57V641620HG-I datasheet.

Product details

Description

The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range.

Features

Single 3.3±0.3V power supply Note) All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operation.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst - 1, 2.

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Other Datasheets by Hynix Semiconductor

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Published: Apr 2, 2005 |