HY57V641620HG-I Datasheet - Hynix Semiconductor

HY57V641620HG-I, 4 Banks x 1M x 16Bit Synchronous DRAM

HY57V641620HG-I Series 4 Banks x 1M x 16Bit Synchronous DRAM .
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption an.

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Datasheet Details

Part number:

HY57V641620HG-I

Manufacturer:

Hynix Semiconductor

File Size:

145.13 KB

Description:

4 Banks x 1M x 16Bit Synchronous DRAM

Features

* Single 3.3±0.3V power supply Note) All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks o

Applications

* r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock inpu

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HY57V641620HG-I Banks 16Bit Synchronous DRAM Hynix Semiconductor

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