HY57V641620HG-I Datasheet - Hynix Semiconductor

HY57V641620HG-I 4 Banks x 1M x 16Bit Synchronous DRAM

The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range. HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation referenced t.

HY57V641620HG-I Features

* Single 3.3±0.3V power supply Note) All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks o

HY57V641620HG-I_HynixSemiconductor.pdf