IS42SM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM

ISSI

Datasheet Details

Part number	IS42SM16160E
Manufacturer	ISSI
File Size	554.56 KB
Description	4M x 16Bits x 4Banks Mobile Synchronous DRAM
Datasheet	IS42SM16160E-ISSI.pdf

These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
8K refresh cycle / 64ms.
Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask function by DQM.
I.

📁 IS42SM16160E Similar Datasheet

IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM (Integrated Silicon Solution)
IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
IS42S16128 - 128K words x 16 Bits x 2 Banks SDRAM (Integrated Silicon)
IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16160B - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16160D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16320B - 32M x 16 512Mb SYNCHRONOUS DRAM (Integrated Silicon Solution)
IS42S16400 - SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Aug 1, 2016 |