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TEC9012 Toshiba (https://www.toshiba.com/) Silicon PNP Transistor

Toshiba
Description SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TEC9012 AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High h FE : hFE=96 - 300 . 1W Output Applications . Complementary to TEC9013 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Tem...
Features . High h FE : hFE=96 - 300 . 1W Output Applications . Complementary to TEC9013 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC...

Datasheet PDF File TEC9012 Datasheet 73.96KB

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