TEC9013 - Silicon NPN Transistor

Toshiba

Key Features

. High hpE = hFE=96-300 . 1 Watts Amplifier.

TEC9013 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TEC9013
Manufacturer	Toshiba
File Size	72.03 KB
Description	Silicon NPN Transistor
Datasheet	TEC9013 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
TEC9011	Silicon NPN Transistor
TEC9012	Silicon PNP Transistor
TEC9014	Silicon NPN Transistor
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TEC9016	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC9013 AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High hpE = hFE=96-300 . 1 Watts Amplifier Applications . Complementary to TEC9012 Unit in mm 5.1 MAX r^ -i i < s CO r-H 0,45 j|l j 0.55 MAX. s || | "i oo 5 0.45 1 1 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic PC L stg RATING 30 UNIT 800 mA -80 mA 625 mW 150 -55-150 1. EMITTER 2. BASE 3. COLLECTOR EI AT Weight : 0.