• Part: TEC9012
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 73.96 KB
Download TEC9012 Datasheet PDF
Toshiba
TEC9012
FEATURES . High h FE : h FE=96 - 300 . 1W Output Applications . plementary to TEC9013 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC stg RATING -30 UNIT -25 -5 -800 m A 80 m A 625 m W -55-150 JEDEC 1. EMITTER 2. BASE 3. COLLECTOR TOSHIBA 2-5F1F Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter- Cut-off Current Collector-Emitter Breakdown Voltage l EBO v (BR) CEO TEST CONDITION V C B=-30V, I E=0 VEB=-5V, I C=0 IC=-lm A DC Current Gain h FE(l) (Note) Vc E=-l V, Ic=-50m A Collector-Emitter Saturation Voltage Base-Emitter Voltage Base-Emitter Saturation Voltage h FE(2) Vc E=-l V, Ic=-500m A v CE(sat) IC=-500m A, l B=20m A V CE=-1V, I c=-50m A VBE(sat) IC=-500m A, l B=-20m A Note : h FE(l)...