TEC9012 - Silicon PNP Transistor

Toshiba

Key Features

. High h FE : hFE=96 - 300 . 1W Output.

TEC9012 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TEC9012
Manufacturer	Toshiba
File Size	73.96 KB
Description	Silicon PNP Transistor
Datasheet	TEC9012 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
TEC9011	Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TEC9012 AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High h FE : hFE=96 - 300 . 1W Output Applications . Complementary to TEC9013 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC stg RATING -30 UNIT -25 -5 -800 mA 80 mA 625 mW 150 -55-150 JEDEC 1. EMITTER 2. BASE 3. COLLECTOR TOSHIBA 2-5F1F Weight : 0.