TEC9016 - Silicon NPN Transistor

Toshiba

Key Features

. Small Collector Output Capacitance : C b=1.2pF(Typ. ) . Low Noise Figure : NF=2. 5dB(Typ. ) (f=l 00MHz) Unit in mm 5.1 MAX. " (14 5 0.55 MAX. VJ 1 0.45 . u r in 5< CO !^ F- CO s cS L.

TEC9016 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TEC9016
Manufacturer	Toshiba
File Size	216.47 KB
Description	Silicon NPN Transistor
Datasheet	TEC9016 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TEC9016 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HGIH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. FEATURES . Small Collector Output Capacitance : C b=1.2pF(Typ.) . Low Noise Figure : NF=2. 5dB(Typ. ) (f=l 00MHz) Unit in mm 5.1 MAX. " (14 5 0.55 MAX. VJ 1 0.45 . u r in 5< CO !^ F- CO s cS L MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT 1.27 , 1-27 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VeBO ic IB 40 V 30 V 4 V 25 mA 2.5 mA *V fT .1 < 3 i. EMITTER 2. BASE 3.