TG2213S Datasheet - Toshiba

GaAs Linear Integrated Circuit GaAs Monolithic

TG2213S Features

* Low insertion Loss: LOSS = 0.35dB (typ.) @1.0 GHz = 0.45dB (typ.) @2.5 GHz High isolation: ISL = 24dB (typ.) @1.0 GHz = 22dB (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: sES6 package (1.5 × 1.5 × 0.52 mm) Pin Assignment, Marking (top view) VC1 6 RFc

TG2213S General Description

RF port. When VC1 = Hi and VC2 = Lo, this port is connected to RFcom. An external DC blocking capacitor (C1) is required for internal DC bias blocking. GND port. The distance between this pin and ground pattern should be as short as possible for RF performance. RF port. When VC1 = Lo and VC2 = Hi, t.

TG2213S Datasheet (163.83 KB)

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TG2213S

Manufacturer:

Toshiba ↗

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163.83 KB

Description:

Gaas linear integrated circuit gaas monolithic.
TG2213S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2213S RF SPDT Switch Antenna switch for Bluetooth class 2, 3 Diversity antenna switc.

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TG2213S GaAs Linear Integrated Circuit GaAs Monolithic Toshiba

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TG2213S Features

TG2213S General Description

Datasheet Details

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