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TH58NVG3S0HBAI6 Datasheet 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

Manufacturer: Toshiba

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General Description

The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.

The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256 Kbytes  16 Kbytes: 4352 bytes  64 pages).

Overview

TH58NVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND.

Key Features

  • Organization x8 Memory cell array 4352  128K  8  2 Register 4352  8 Page size 4352 bytes Block size (256K  16K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 4016 blocks Max 4096 blocks.
  • Power supply VCC  2.7V to 3.6V.
  • Access time Cell array to register 25 .

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