Datasheet4U Logo Datasheet4U.com

TH58TEG7DCJTAK0 Datasheet Nand Memory Toggle Ddr1.0

Manufacturer: Toshiba

Overview: TOSHIBA CONFIDENTIAL Tx58TEGxDCJTAx0 TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet Rev. 0.3 2012 – 04 – 10 TOSHIBA Semiconductor & Storage Products Memory Division TC58TEG6DCJTA00 / TC58TEG6DCJTAI0 TH58TEG7DCJTA20 / TH58TEG7DCJTAK0 TH58TEG8DCJTA20 / TH58TEG8DCJTAK0 0 TENTATIVE 2012-04-10C 1. INTRODUCTION TOSHIBA CONFIDENTIAL Tx58TEGxDCJTAx0 1.1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Toggle DDR is a NAND interface for high performance applications which support data read and write operations using bidirectional DQS.

Toggle DDR NAND has implemented ’Double Data Rate’ without a clock.

It is patible with functions and mand which have been supported in conventional type NAND(i.e.

Key Features

  • Organization Table 1 Product Organization Parameter Part number (TOPER: 0~70℃) Part number (TOPER: -40~85℃) Device capacity Page size Block size Plane size Plane per one LUN LUN per one target Target per one device Number of valid blocks per a device (min) Number of valid blocks per a device (max) TC58TEG6DCJ TC58TEG6DCJTA00 TC58TEG6DCJTAI0 17664×256×2092×8 bits 17664 Bytes (4M + 320 K) Bytes 9459990528Bytes 1 Planes 1 LUNs 1 target 2018 2092 TH58TEG7DCJ TH58TEG7DCJTA20 TH58TEG7DCJTAK0 17664×.

More Datasheets from Toshiba

Part Number Description
TH58TEG7DCJTA20 NAND memory Toggle DDR1.0
TH58TEG7DDKTA20 NAND memory Toggle DDR1.0
TH58TEG7DDKTAK0 NAND memory Toggle DDR1.0
TH58TEG8DCJTA20 NAND memory Toggle DDR1.0
TH58TEG8DCJTAK0 NAND memory Toggle DDR1.0
TH58TEG8DDKTA20 NAND memory Toggle DDR1.0
TH58TEG8DDKTAK0 NAND memory Toggle DDR1.0
TH58BVG2S3HBAI4 4-GBIT (512M x 8-BIT) CMOS NAND E2PROM
TH58BVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
TH58BVG3S0HBAI6 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM

TH58TEG7DCJTAK0 Distributor