Datasheet Summary
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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
Features n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz
TIM1414-4LA P reliminaly n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB pression Point VDS= 9V Power Gain at 1dB G1dB f= 14.0 to 14.5GHz pression Point Drain Current IDS1 ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆Tch. Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=25dBm (Single Carrier...