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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz
TIM1414-4LA P reliminaly
n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 9V Power Gain at 1dB G1dB f= 14.0 to 14.5GHz Compression Point Drain Current IDS1 ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆TchDataSheet4U.com Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=25dBm (Single Carrier Level) UNIT dBm dB A % dBc A °C MIN. 36.0 6.0 -42 TYP. MAX. 36.5 6.5 1.7 23 -45 1.7 2.
TIM1414-4LA Datasheet
