TIM1414-10A Overview
TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band).
TIM1414-10A Key Features
- High power
- P1dB =40.5 dBm at 14.0 GHz to14.5 GHz
- High gain
- G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
- Broad Band Internally Matched
- Hermetically sealed package RF Performance Specifications (Ta = 25° C)
- Typ. 40.5 6.0 4.0 23
- Typ. 2800 -3.5 10.0
- 2.0 Max
- 5.0 11.5