TIM1414-10A Datasheet Microwave Power Gaas Fet

Manufacturer: Toshiba

Overview: .. TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X,.

Datasheet Details

High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz.
High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz.
Broad Band Internally Matched.
Hermetically sealed package RF Performance Speciﬁcations (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efﬁciency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.0 ~ 14.5GHz Condition Unit dBm dB A % °C.