TIM1414-10LA Description
TOSHIBA MICROWAVE POWER GaAs FET.
TIM1414-10LA Key Features
- Low intermodulation distortion
- IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level
- High power
- P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz
- High gain
- G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
- Broadband internally matched
- Hermetically sealed package RF Performance Specifications (Ta = 25°C)
- Typ. 40.5 6.0 4.0
- 21 -45 4.0