TIM1414-10LA Datasheet | Toshiba

.. TOSHIBA MICROWAVE POWER Ga As FET Features - Low intermodulation distortion - IM3 = -45 d Bc at Po = 29.0 d Bm, Single Carrier Level - High power - P1d B = 40.5 d Bm at 14.0 GHz to 14.5 GHz - High gain - G1d B = 6.0 d B at 14.0 GHz to 14.5 GHz - Broadband internally matched - Hermetically sealed package RF Performance Specifications (Ta = 25°C) Characteristic Output Power at 1d B pression Point Power Gain at 1d B pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1d B G1d B IDS1 ∆G ηadd IM3 IDS2 ∆Tch Note 1 VDS = 9V f = 14.0 ~ 14.5 GHz Condition Unit d Bm d B A d B % d Bc Min. 40.0 5.0 - - - -42 - - Typ. 40.5 6.0 4.0 - 21 -45 4.0 - Max. - - 5.0 ± 0.8 - - 5.0 90 Data Shee . VDS x IDS x Rth (c-c) A °C Note 1: 2-tone Test Pout, Po = 29.0 d Bm Single Carrier Level. Electrical Characteristics (Ta = 25°C) Characteristic Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c) Condition VDS = 3V IDS = 4.8A VDS = 3V IDS = 145 m A VDS = 3V VGS = 0V IGS = -145 µA Channel to Case Unit m S V A V °C/W Min. - -2.0 -...