TIM1414-10LA Datasheet Microwave Power Gaas Fet

Manufacturer: Toshiba

Overview: .. TOSHIBA MICROWAVE POWER GaAs FET.

Datasheet Details

Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level.
High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz.
High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz.
Broadband internally matched.
Hermetically sealed package RF Performance Speciﬁcations (Ta = 25°C) Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efﬁciency 3rd Order Intermodulatio.