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TIM1414-15L - Microwave Power GaAs FET

Datasheet Summary

Features

  • ŋBROAD BAND.

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Datasheet Details

Part number TIM1414-15L
Manufacturer Toshiba
File Size 313.18 KB
Description Microwave Power GaAs FET
Datasheet download datasheet TIM1414-15L Datasheet
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Full PDF Text Transcription

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MICROWAVE POWER GaAs FET TIM1414-15L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 14.0GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -42dBc(Min.) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 4.0A f= 14.0 to 14.
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