TIM1414-10LA-252 Description
UNIT 39.0 39.5 dBm CONDITION ηadd IM3 ∆Tch . CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage SYMBOL ( Ta= Ta= 25°C ) MIN.
TIM1414-10LA-252 is Microwave Power GaAs FET manufactured by Toshiba.
| Part Number | Description |
|---|---|
| TIM1414-10LA | Microwave Power GaAs FET |
| TIM1414-10A | Microwave Power GAAS Fet |
| TIM1414-10A-252 | Microwave Power GAAS Fet |
| TIM1414-15-253 | Microwave Power GaAs FET |
| TIM1414-15L | Microwave Power GaAs FET |
UNIT 39.0 39.5 dBm CONDITION ηadd IM3 ∆Tch . CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage SYMBOL ( Ta= Ta= 25°C ) MIN.