• Part: TIM1414-10LA-252
  • Description: Microwave Power GaAs FET
  • Manufacturer: Toshiba
  • Size: 165.63 KB
Download TIM1414-10LA-252 Datasheet PDF
Toshiba
TIM1414-10LA-252
TIM1414-10LA-252 is Microwave Power GaAs FET manufactured by Toshiba.
.. TOSHIBA Oct. 1999 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1d B pression Point Power Gain at 1d B pression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1d B VDS= 9V G1d B IDS f =13.75-14.5GHz 4.5 2-tone test Po=29d Bm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 d B A % d Bc °C ( Ta= Ta= 25°C ) MIN. TYP. MAX. UNIT 39.0 39.5 d Bm CONDITION ηadd IM3 ∆Tch . Data Shee 2. ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= Ta= 25°C ) MIN. TYP. MAX. UNIT -2.0 -5 2800 -3.5 -5.0 m S V A V °C/W CONDITION VDS= 3V IDS= 4.8A VDS= 3V IDS= 145m A VDS= 3V VGS=0V IGS= -145µA Channel to Case gm VGSoff IDSS VGSO Rth(c-c) 10.0 11.5 2.0 2.5 Applications Engineering Solid-State Engineering Department TOSHIBA CORPORATION, Komukai Operations . - 1- . Data Sheet 4 U...