TIM1414-10LA-252 Overview
UNIT 39.0 39.5 dBm CONDITION ηadd IM3 ∆Tch . CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage SYMBOL ( Ta= Ta= 25°C ) MIN.
TIM1414-10LA-252 datasheet by Toshiba.
| Part number | TIM1414-10LA-252 |
|---|---|
| Datasheet | TIM1414-10LA-252_Toshiba.pdf |
| File Size | 165.63 KB |
| Manufacturer | Toshiba |
| Description | Microwave Power GaAs FET |
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UNIT 39.0 39.5 dBm CONDITION ηadd IM3 ∆Tch . CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage SYMBOL ( Ta= Ta= 25°C ) MIN.
| Part Number | Description |
|---|---|
| TIM1414-10LA | Microwave Power GaAs FET |
| TIM1414-10A | Microwave Power GAAS Fet |
| TIM1414-10A-252 | Microwave Power GAAS Fet |
| TIM1414-15-253 | Microwave Power GaAs FET |
| TIM1414-15L | Microwave Power GaAs FET |
| TIM1414-18L | Microwave Power GaAs FET |
| TIM1414-18L-252 | MICROWAVE POWER GaAs FET |
| TIM1414-2 | Microwave Power GaAs FET |
| TIM1414-2-252 | Microwave Power GaAs FET |
| TIM1414-2L | MICROWAVE POWER GaAs FET |