TIM1414-10LA-252
TIM1414-10LA-252 is Microwave Power GaAs FET manufactured by Toshiba.
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TOSHIBA
Oct. 1999
1. RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1d B pression Point Power Gain at 1d B pression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Channel Temperature Rise SYMBOL P1d B VDS= 9V G1d B IDS f =13.75-14.5GHz 4.5 2-tone test Po=29d Bm(SCL) VDS x IDS x Rth -42 5.5 4.0 23 -45 5.0 90 d B A % d Bc °C
( Ta= Ta= 25°C )
MIN. TYP. MAX. UNIT 39.0 39.5 d Bm
CONDITION
ηadd
IM3 ∆Tch
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Data Shee
2. ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
( Ta= Ta= 25°C )
MIN. TYP. MAX. UNIT -2.0 -5 2800 -3.5 -5.0 m S V A V °C/W
CONDITION VDS= 3V IDS= 4.8A VDS= 3V IDS= 145m A VDS= 3V VGS=0V IGS= -145µA
Channel to Case gm
VGSoff IDSS VGSO Rth(c-c)
10.0 11.5 2.0 2.5
Applications Engineering Solid-State Engineering Department
TOSHIBA CORPORATION, Komukai Operations
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- 1-
. Data Sheet 4 U...