TIM1414-4A Description
TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band).
TIM1414-4A Key Features
- High power
- P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz
- High gain
- G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz
- Broad Band Internally Matched
- Hermetically sealed package RF Performance Specifications (Ta = 25° C)
- Typ. 36.5 6.5 1.7 23
- Typ. 1200 -3.5 4.0
- 2.9 Max
- 5.0 5.2