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TIM1414-4A - Microwave Power GaAs FET

Datasheet Summary

Features

  • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz.
  • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz.
  • Broad Band Internally Matched.
  • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.0 ~ 14.5 GHz Condition Unit dBm dB A %.

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Datasheet Details

Part number TIM1414-4A
Manufacturer Toshiba
File Size 350.05 KB
Description Microwave Power GaAs FET
Datasheet download datasheet TIM1414-4A Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.0 ~ 14.5 GHz Condition Unit dBm dB A % °C Min. 36.0 6.0 – – – Typ. 36.5 6.5 1.7 23 – Max – – 2.
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