TIM1414-4LA Datasheet | Toshiba

.. MICROWAVE POWER Ga As FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA Features n HIGH POWERT P1d B=36.5d Bm at 14.0GHz to 14.5GHz n HIGH GAIN G1d B=6.5d B at 14.0GHz to 14.5GHz TIM1414-4LA P reliminaly n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1d B P1d B pression Point VDS= 9V Power Gain at 1d B G1d B f= 14.0 to 14.5GHz pression Point Drain Current IDS1 ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆Tch. Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=25d Bm (Single Carrier Level) UNIT d Bm d B A % d Bc A °C MIN. 36.0 6.0   -42   TYP. MAX.  36.5 6.5 1.7 23 -45 1.7   2.2   2.2 70 Data Shee ELECTRICAL CHARACTERISTICS ( Ta= 25° C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITION VDS = 3V IDS = 2.0A VDS = 3V IDS = 60m A VDS = 3V VGS= 0V IGS= -60µA Channel to Case UNIT m S V A V °C/W gm VGSoff IDSS VGSO Rth(c-c) MIN.  -2.0  -5  TYP. 1200 -3.5 4.0  2.9 MAX.  -5.0 5.2  3.5 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. . Jun. 2002 . Data Sheet4 U...