･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN
G1dB= 10.0dB at 5.3GHz to 5.9GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER.
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy
Download