ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 48.0dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN
G1dB= 8.0dB at 5.85GHz to 6.75GHz ŋLOW INTERMODULATION DISTORTION
IM3= -45dB.
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