TK12E80W - Silicon N-Channel MOSFET

Name: TK12E80W
SKU: TK12E80W-1394966

Toshiba

The TK12E80W by Toshiba is a Silicon N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TK12E80W
Manufacturer	Toshiba
File Size	414.87 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK12E80W-Toshiba.pdf
Additional preview pages of the TK12E80W datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA) 3. Packaging and Internal Circuit TK12E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power d.

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Published: Jul 30, 2019 |