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TK155E65Z Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-Channel MOS (DTMOS�) TK155E65Z 1. Applications • Switching Power Supplies 2.

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ. ) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA) 3. Packaging and Internal Circuit TK155E65Z 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25.
  • unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Sing.

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