TK20V60W5
Features
(1) Fast reverse recovery time: trr = 110 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.156 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
DFN8x8
1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink)
Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins.
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1)
Power dissipation
Single-pulse avalanche energy
(Note 2)
200 m J
Avalanche current
Reverse drain current (DC)
(Note 1)
Reverse drain current (pulsed)
(Note 1)
IDRP
Channel temperature
Tch...
