TK20V60W5 - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Fast reverse recovery time: trr = 110 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.156 Ω(typ. ) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20V60W5 DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless other.

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