4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Drain current (DC)
Drain current (pulsed)
(Tc = 25)
Single-pulse avalanche energy
Single-pulse avalanche current
Turn-off dVDS/dt ruggedness
-55 to 175
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Channel-to-case thermal resistance
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe
operating area is not only limited to thermal limits but also the current concentration phenomenon. This device
should not be used under conditions outside its safe operating area shown herein.
Note 3: VDD = 48 V, Tch = 25 (initial), L = 11.3 µH, RG = 25 Ω, IAS = 40 A
Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
Toshiba Electronic Devices & Storage Corporation