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Toshiba Electronic Components Datasheet

TK40S06N1L Datasheet

N-channel MOSFET

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MOSFETs Silicon N-channel MOS (U-MOS-H)
TK40S06N1L
1. Applications
• Automotive
• Motor Drivers
• Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 8.7 m(typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TK40S06N1L
DPAK+
1: Gate
2: Drain (heatsink)
3: Source
©2018-2020
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2015-06
2020-06-24
Rev.5.0


Toshiba Electronic Components Datasheet

TK40S06N1L Datasheet

N-channel MOSFET

No Preview Available !

TK40S06N1L
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
VDSS
60
V
VGSS
±20
Drain current (DC)
(Note 1)
ID
40
A
Drain current (pulsed)
Power dissipation
(Note 1)
IDP
(Tc = 25)
(Note 2)
PD
80
88.2
W
Single-pulse avalanche energy
(Note 3)
EAS
23.4
mJ
Single-pulse avalanche current
IAS
40
A
Turn-off dVDS/dt ruggedness
dVDS/dt
7.2
V/ns
Channel temperature
(Note 4)
Tch
175
Storage temperature
(Note 4)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
1.7
/W
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe
operating area is not only limited to thermal limits but also the current concentration phenomenon. This device
should not be used under conditions outside its safe operating area shown herein.
Note 3: VDD = 48 V, Tch = 25(initial), L = 11.3 µH, RG = 25 , IAS = 40 A
Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2018-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-06-24
Rev.5.0



Part Number TK40S06N1L
Description N-channel MOSFET
Maker Toshiba
Total Page 3 Pages
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