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TK650A60F - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK650A60F
Manufacturer	Toshiba ↗
File Size	460.15 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK650A60F-Toshiba.pdf

TK650A60F Product details

Features

(1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ. ) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 1.16 mA) 3. Packaging and Internal Circuit TK650A60F 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-puls.

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Published: May 24, 2019 |