TK80E06K3A mos equivalent, silicon n-channel mos.
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V,.
* Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low .
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