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Toshiba Electronic Components Datasheet

TLP750F Datasheet

Photocoupler

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TOSHIBA Photocoupler IRED + Photo IC
TLP750F
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
Transistor Inverter
The TOSHIBA TLP750F consists of a high-output infrared emitting diode
optically coupled to a high-speed photodiode with a transistor amplifier
and is housed in an 8-pin DIP.
The TLP750F has no internal base connection and features noise
immunity, thus it is suitable for inverter drivers for variable-speed motor
drives.
TLP750F
Unit: mm
Switching speed: tpHL=0.3μs (typ.)
Switching speed: tpLH=0.5μs (typ.) (RL=1.9kΩ)
Isolation voltage: 5000 Vrms (min)
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
VDE-approved: EN 60747-5-5 (Note 1)
Note 1 : When a VDE approved type is needed,
please designate the Option(D4).
Creepage distance: 8.0mm (min)
Clearance: 8.0mm (min)
Insulation thickness: 0.4mm (min)
TOSHIBA
1110C402S
Weight: 0.54 g (typ.)
Pin Configuration (top view)
1
2
3
4
Schematic
IF
2
VF
3
1 : N.C.
8
2 : Anode
7
3 : Cathode
4 : N.C.
6 5 : Emitter
6 : Collector
5
7 : N.C.
8 : CVaCtChode
ICC
VCC
8
IO
VO
6
GND
5
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1989-10
2019-06-10


Toshiba Electronic Components Datasheet

TLP750F Datasheet

Photocoupler

No Preview Available !

Absolute Maximum Ratings (Ta = 25°C)
TLP750F
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Peak transient forward current
Reverse voltage
Diode power dissipation
Output current
Peak output current
Output voltage
Supply voltage
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature(10 s)
Isolation voltage (AC, 60 s, R.H.=60 %)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
IF
IFP
IFPT
VR
PD
IO
IOP
VO
VCC
PO
Topr
Tstg
Tsol
BVS
25
50
1
5
45
8
16
0.5 to 15
0.5 to 15
100
55 to 100
55 to 125
260
5000
mA
mA
A
V
mW
mA
mA
V
V
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Derate 0.8 mA / °C above 70 °C.
(Note 2) 50 % duty cycle, 1 ms pulse width.
Derate 1.6 mA / °C above 70 °C.
(Note 3) Pulse width 1 μs, 300 pps.
(Note 4) Derate 0.9 mW / °C above 70 °C.
(Note 5) Derate 2 mW / °C above 70 °C.
(Note 6) Soldering portion of lead: Up to 2 mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-10


Part Number TLP750F
Description Photocoupler
Maker Toshiba
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TLP750F Datasheet PDF






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