TLP759F Datasheet | Toshiba

TOSHIBA Photocoupler IRED+Photo- IC Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Industrial Inverter Unit: mm The TOSHIBA TLP759F consists of a high- output infrared emitting diode and a high speed detector of one chip photo diode- transistor. This unit is 8-lead DIP. TLP759F has no internal base connection, and a Faraday shield integrated on the photodetector chip provides an effective mon mode noise transient immunity. So this is suitable for application in noisy environmental condition. - Isolation voltage: 5000 Vrms (min) - Switching speed: tp HL = 0.2μs (typ.) tp LH = 0.3μs (typ.) (RL=1.9 kΩ) - TTL patible - UL-recognized: UL 1577, File No.E67349 - c UL-recognized: CSA ponent Acceptance Service No.5A File No.E67349 - VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option (D4). - Mechanical Parameters Creepage distance: 8.0 mm (min) Clearance: 8.0 mm (min) Insulation thickness: 0.4 mm (min) TOSHIBA 11- 10C402S Weight: 0.54 g (typ.) Pin Configuration (top view) 1 2 3 4 SHIELD 8 1: N.C. 2: Anode 3: Cathode 7 4: N.C. 5: Emitter(gnd) 6 6: Collector(output) 7: N.C. 5 8: Vcc Schematic IF 2 VF 3 Shield ICC IO VCC 8 VO 6 GND...