TMM27512D-25 memory equivalent, n-mos uv erasable and electrically programmable read only memory.
-200
-250 I
!5V±10%
~~----~-------r------~-2-0-0--ns I 250ns I
35mA
130mA 40mA
reduces power dissipation without increasing access time. The standby mode is achieve.
Image gallery
Download